| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a fabricating method of a semiconductor element in which the semiconductor element having good characteristics, high reliability and long lifetime, is easily fabricated. <P>SOLUTION: Seeds including an amorphous layer, etc. are regularly formed on a base substrate, a nitride based III-V compound semiconductor is grown with an inclined face composed of a facet face, dislocations are propagated by the growth with the inclined face composed of the facet face retained, the dislocations are accumulated to the seed region, the substrate is removed, and a surface of the semiconductor is planarized. Accordingly, a plurality of second regions each having an average dislocation density higher than that of a first region are regularly arranged in the first region of single-crystal to fabricate a nitride based III-V compound semiconductor substrate composed of single-crystal in which C-axis is reversed in the second region about the first region. The second region is, at least, partially removed from the major substrate by etching, or the surface of the second region is covered with a coat layer like an insulation film, etc., and thereafter a nitride based III-V compound semiconductor layer for element-formation is grown. <P>COPYRIGHT: (C)2008,JPO&INPIT |
