| 摘要 |
A random access memory architecture includes a first series connected pair of memory elements (202, 206, 302, 306, 402, 404) having a first resistance and a second series connected pair of memory elements (204, 208, 304, 308, 406, 408) having a second resistance coupled in parallel with the first series connected pair of memory elements, wherein a current flows in the first direction through both of the first and second series connected pair of memory elements. A sense amplifier (14) is coupled to an array (16) of MRAM cells (77), each including a memory element, and includes a voltage bias portion (12), the voltage bias portion including the first and second series connected pair of memory elements. The memory elements may be, for example, magnetic tunnel junctions. |
