发明名称 |
METHOD OF DIRECT ELECTRODEPOSITION ON SEMICONDUCTORS |
摘要 |
The present disclosure provides a method of electrodeposition of a metal or metal alloy on at least one surface of a semiconductor material. The method of the present invention provides full coverage of an electrodeposited metallic film on the at least one surface of the semiconductor material. The method of the present disclosure includes providing a semiconductor material. A metallic film is applied to at least one surface of the semiconductor material by an electrodeposition process. The electrodeposition process employed uses current waveforms that apply a low current density initially, and after a predetermined period of time, the current density is changed to a high current density. |
申请公布号 |
KR20110116982(A) |
申请公布日期 |
2011.10.26 |
申请号 |
KR20110032449 |
申请日期 |
2011.04.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SHAO XIAOYAN;KOSBAR LAURA LOUISE |
分类号 |
H01L31/18;H01L31/0216;H01L31/042 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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