| 摘要 |
<p>A thin film temperature-difference cell and the fabricating method thereof are provided. The method comprises that: a P-type thermoelectric material layer, an insulating materials layer and N-type thermoelectric material layer are plated on a base (101) to form a three-layer PN junction or a plurality of three-layer PN junctions connected in series. The insulating-material layer in each three-layer PN junction, and electrodes (102, 110) are respectively let out from the upper surface of the base and the outermost layer of the last three-layer PN junction. Because the method adopts forming the three-layer PN junction by plating the P-type thermoelectric material layer, an insulating materials layer and N-type thermoelectric material layer to form a thermocouple, no special process for connecting the P-type thermoelectric material and N-type thermoelectric material is needed during the plating process of the thermoelectric-material layers, and the fabrication technology of the thin film temperature-difference cell is simplified. Due to the characteristics of thin film thermoelectric material and the structure of a multi-layer film is a series connection structure of a plurality of three-layer PN junctions, the performance of the fabricated thin film temperature-difference cell is greatly enhanced.</p> |
