发明名称
摘要 <p>PROBLEM TO BE SOLVED: To provide a structure and method for preventing optical conductivity from decreasing due to the application of light by amorphous silicon. SOLUTION: After an amorphous silicon layer is formed on a substrate, or after light is applied to the formed amorphous silicon layer, cyan treatment for introducing a cyano ion CN- to the amorphous silicon layer is made. For example, it is immersed into a potassium cyanide (KCN) solution 4 in a treatment bath 6. These (weakly combined parts, defects, recombination centers, or the like) which can cause light to deteriorate, while existing at the point when an amorphous silicon thin film is formed disappear due to the cyan treatment, optical conductivity from the start of use increases, and at the same time, no optical conductivity decreases due to the application of light.</p>
申请公布号 JP4801833(B2) 申请公布日期 2011.10.26
申请号 JP20000306438 申请日期 2000.10.05
申请人 发明人
分类号 H01L31/04 主分类号 H01L31/04
代理机构 代理人
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