发明名称 |
ELECTRICAL CONTACTS FOR CMOS DEVICES AND III-V DEVICES FORMED ON A SILICON SUBSTRATE |
摘要 |
A semiconductor structure having a substrate, a seed layer over the substrate; a silicon layer disposed on the seed layer; a transistor device in the silicon layer; a III-V device disposed on the seed layer; and a plurality of electrical contacts, each one of the electrical contacts having a layer of TiN or TaN and a layer of copper or aluminum on the layer of TaN or TiN, one of the electrical contacts being electrically connected to the transistor and another one of the electrical contacts being electrically connected to the III-V device. |
申请公布号 |
EP2380195(A1) |
申请公布日期 |
2011.10.26 |
申请号 |
EP20100700798 |
申请日期 |
2010.01.20 |
申请人 |
RAYTHEON COMPANY |
发明人 |
TABATABAIE, KAMAL;DAVIS, MICHAEL, S.;LAROCHE, JEFFREY, R.;KAPER, VALERY, S.;BETTENCOURT, JOHN, P. |
分类号 |
H01L21/8258;H01L23/485;H01L27/06;H01L27/092 |
主分类号 |
H01L21/8258 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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