Method for decontaminating semi-conductor wafers

摘要

The method involves lowering and increasing pressure in an enclosure (1). Gas i.e. nitrogen, heated at temperature higher than ambient temperature is injected into the enclosure during increasing the pressure in the enclosure, where the temperature ranges between 40 and 90 degree Celsius. The pressure lowering and increasing process is repeated for 3 to 15 times, where the pressure in the enclosure is lowered up to a low value.