发明名称 |
Capacitance detection type sensor and manufacturing method thereof |
摘要 |
<p>Capacitance sensor electrodes (22) are arranged in a form of matrix on a semiconductor substrate (10) and coated with a cover film (23). These capacitance sensor electrodes (22) are connected to a drive circuit (11). ESD electrodes (21) are arranged in the vicinities of corner portions of the capacitance sensor electrodes (22). Each ESD electrode (21) is composed of a film containing, for example, aluminum excellent in conductivity and a TiN film formed thereon. The ESD electrodes (21) are grounded through the semiconductor substrate (10). On each ESD electrode (21), a plurality of fine ESD holes reaching the ESD electrode (21) from a surface of the cover film (23) are formed.</p> |
申请公布号 |
EP1944722(B1) |
申请公布日期 |
2011.10.26 |
申请号 |
EP20080006692 |
申请日期 |
2002.11.06 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
ITO, MASAKI;ONODERA, HIDEO;IWAMOTO, SHIGERU |
分类号 |
G01B7/28;G06K9/00;A61B5/117;G06K9/20;G06T1/00;H01L21/822;H01L27/04 |
主分类号 |
G01B7/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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