发明名称 Capacitance detection type sensor and manufacturing method thereof
摘要 <p>Capacitance sensor electrodes (22) are arranged in a form of matrix on a semiconductor substrate (10) and coated with a cover film (23). These capacitance sensor electrodes (22) are connected to a drive circuit (11). ESD electrodes (21) are arranged in the vicinities of corner portions of the capacitance sensor electrodes (22). Each ESD electrode (21) is composed of a film containing, for example, aluminum excellent in conductivity and a TiN film formed thereon. The ESD electrodes (21) are grounded through the semiconductor substrate (10). On each ESD electrode (21), a plurality of fine ESD holes reaching the ESD electrode (21) from a surface of the cover film (23) are formed.</p>
申请公布号 EP1944722(B1) 申请公布日期 2011.10.26
申请号 EP20080006692 申请日期 2002.11.06
申请人 FUJITSU SEMICONDUCTOR LIMITED 发明人 ITO, MASAKI;ONODERA, HIDEO;IWAMOTO, SHIGERU
分类号 G01B7/28;G06K9/00;A61B5/117;G06K9/20;G06T1/00;H01L21/822;H01L27/04 主分类号 G01B7/28
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