发明名称 DIPPING SOLUTION FOR USE IN PRODUCTION OF SILICEOUS FILM AND PROCESS FOR PRODUCING SILICEOUS FILM USING THE DIPPING SOLUTION
摘要 This invention relates to a dipping solution used in a process for producing a siliceous film. The present invention provides a dipping solution and a siliceous film-production process employing the solution. The dipping solution enables to form a homogeneous siliceous film even in concave portions of a substrate having concave portions and convex portions. The substrate is coated with a polysilazane composition, and then dipped in the solution before fire. The dipping solution comprises hydrogen peroxide, a foam-deposit inhibitor, and a solvent.
申请公布号 KR20110116966(A) 申请公布日期 2011.10.26
申请号 KR20107022181 申请日期 2009.03.03
申请人 AZ ELECTRONIC MATERIALS (JAPAN) K.K. 发明人 HAYASHI MASANOBU
分类号 C08J5/22;B05D3/10;H01L21/316 主分类号 C08J5/22
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