Production of a memory unit with independent self-aligned gates

摘要

The method involves forming a diblock copolymer layer above a gate material layer resting on a support. Polymer blocks are selectively withdrawn from a diblock polymer layer for conserving patterns separated by a distance. A transistor gate block (110a) and a sacrificial block (110b) are formed by engraving the gate material layer through parallelepiped patterns, where the gate and sacrificial blocks are separated by a space. Another gate material layer and insulating layers are formed in the space. The sacrificial block is removed.