发明名称 |
FABRICATION OF SIC SUBSTRATES WITH LOW WARP AND BOW |
摘要 |
A method of fabricating an SiC single crystal includes (a) physical vapor transport (PVT) growing a SiC single crystal on a seed crystal in the presence of a temperature gradient, wherein an early-to-grow portion of the SiC single crystal is at a lower temperature than a later-to-grow portion of the SiC single crystal. Once grown, the SiC single crystal is annealed in the presence of a reverse temperature gradient, wherein the later-to-grow portion of the SiC single crystal is at a lower temperature than the early-to-grow portion of the SiC single crystal. |
申请公布号 |
EP2171134(A4) |
申请公布日期 |
2011.10.26 |
申请号 |
EP20080772027 |
申请日期 |
2008.06.26 |
申请人 |
II-VI INCORPORATED |
发明人 |
WU, PING;ZWIEBACK, ILYA;GUPTA, AVINESH, K.;SEMENAS, EDWARD |
分类号 |
C30B23/00;C30B23/06;C30B29/36;C30B33/02 |
主分类号 |
C30B23/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|