发明名称 IDDQ testing
摘要 Embodiments of the invention relate to device-embedded IDDQ testing in the field to detect defects, aging, and other reliability reducing problems. Methods of testing integrated circuits and integrated circuit devices are disclosed. For example, an integrated circuit device can comprise an integrated circuit, a buffer capacitor coupled to the integrated circuit; and IDDQ test circuitry coupled to the buffer capacitor and configured to suspend normal operation of the integrated circuit and measure a discharge time of the buffer capacitor, wherein the discharge time is related to a leakage current of the integrated circuit.
申请公布号 US8044676(B2) 申请公布日期 2011.10.25
申请号 US20080136782 申请日期 2008.06.11
申请人 INFINEON TECHNOLOGIES AG 发明人 HAMMERSCHMIDT DIRK
分类号 G01R31/00;G01R31/02;G01R31/26 主分类号 G01R31/00
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