发明名称 |
Method for manufacturing semiconductor substrate |
摘要 |
It is an object to provide a novel manufacturing method of a semiconductor substrate containing silicon carbide. The method for manufacturing a semiconductor device includes the steps of performing carbonization treatment on a surface of a silicon substrate to form a silicon carbide layer; adding ions to the silicon substrate to form an embrittlement region in the silicon substrate; bonding the silicon substrate and a base substrate with insulating layers interposed between the silicon substrate and the base substrate; heating the silicon substrate and separating the silicon substrate at the embrittlement region to form a stacked layer of the silicon carbide layer and a silicon layer over the base substrate with the insulating layers interposed between the base substrate and the stacked layer; and removing the silicon layer to expose a surface of the silicon carbide layer.
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申请公布号 |
US8043937(B2) |
申请公布日期 |
2011.10.25 |
申请号 |
US20100730284 |
申请日期 |
2010.03.24 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TAKAYAMA TORU |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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