| 摘要 |
This patent relates to a photomask and a method of forming an overlay vernier of a semiconductor device employing the same. The photomask includes a reticle formed of a first material through which light can transmit, a first pattern formed on the reticle and formed of a material through which light cannot transmit, a second pattern having a size smaller than the first pattern, and an auxiliary pattern formed to come in contact with the first pattern and formed of a second material different from the first material of the reticle. Thus, inclination is formed on side portions of the overlay vernier and a thin film may be easily formed on the overlay vernier.
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