发明名称 Semiconductor device
摘要 The invention relates to a semiconductor device with a semiconductor chip, on which a terminal contact formed in one piece, a patterned metallization layer, contacting the terminal contact, and a connecting layer are successively arranged, the patterned metallization layer and the patterned connecting layer forming an electrically conducting contact layer.
申请公布号 US8044523(B2) 申请公布日期 2011.10.25
申请号 US20050157691 申请日期 2005.06.21
申请人 INFINEON TECHNOLOGIES AG 发明人 OTREMBA RALF
分类号 H01L23/48 主分类号 H01L23/48
代理机构 代理人
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