发明名称 |
Method for manufacturing display device |
摘要 |
The present invention relates to a method for manufacturing a display device including a p-channel thin film transistor and an n-channel thin film transistor having a microcrystalline semiconductor film each of which are an inverted-staggered type, and relates to a method for formation of an insulating film and a semiconductor film which are included in the thin film transistor. Two or more kinds of high-frequency powers having different frequencies are supplied to an electrode for generating glow discharge plasma in a reaction chamber. High-frequency powers having different frequencies are supplied to generate glow discharge plasma, so that a thin film of a semiconductor or an insulator is formed. High-frequency powers having different frequencies (different wavelength) are superimposed and applied to the electrode of a plasma CVD apparatus, so that densification and uniformity of plasma for preventing the effect of surface standing wave of plasma can be realized.
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申请公布号 |
US8043901(B2) |
申请公布日期 |
2011.10.25 |
申请号 |
US20080222686 |
申请日期 |
2008.08.14 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;ARAI YASUYUKI;SUZUKI YUKIE;KUROKAWA YOSHIYUKI |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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地址 |
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