发明名称 Exposure apparatus capable of asymmetrically adjusting light intensity
摘要 An exposure apparatus of a semiconductor device may include an exposure light source; an asymmetric adjustment filter for asymmetrically adjusting intensity of a light which passes through the exposure light source; a photomask for passing the light of which intensity is adjusted by the asymmetric adjustment filter; a projection lens for projecting the light passing through the photomask; and a wafer stage for mounting a wafer on which an image is formed by the light from the projection lens.
申请公布号 US8045139(B2) 申请公布日期 2011.10.25
申请号 US20070955646 申请日期 2007.12.13
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHO BYEONG HO;CHANG DONG SOOK
分类号 G03B27/54;G03B27/72 主分类号 G03B27/54
代理机构 代理人
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