发明名称 Program method of nonvolatile memory device
摘要 According to an aspect of a program method of a nonvolatile memory device, a first program operation for programming a first data stored in a first latch may be performed and a cache program signal may be input for inputting a second data to be programmed subsequently. When the cache program signal is input, a determination is made as to whether a first program verify operation is being performed, and if so, the verify operation is stopped, the second data is input, and the first program verify operation is restarted.
申请公布号 US8045393(B2) 申请公布日期 2011.10.25
申请号 US20080347583 申请日期 2008.12.31
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM BYUNG RYUL;CHUNG JUN SEOP;KIM DUCK JU
分类号 G11C11/34;G11C16/06 主分类号 G11C11/34
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