发明名称 |
Plasma oxidizing method, storage medium, and plasma processing apparatus |
摘要 |
A plasma oxidizing method in which a plasma is produced in a processing chamber of a plasma processing apparatus under a processing condition that the proportion of oxygen in the processing gas is 20% or more and the processing pressure is 400 to 1333 Pa, and silicon exposed from the surface of an object to be processed is oxidized by the plasma to form a silicon oxide film.
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申请公布号 |
US8043979(B2) |
申请公布日期 |
2011.10.25 |
申请号 |
US20070443493 |
申请日期 |
2007.09.27 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KOBAYASHI TAKASHI;KITAGAWA JUNICHI;KABE YOSHIRO;SHIOZAWA TOSHIHIKO |
分类号 |
H01L21/31;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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