发明名称 Semiconductor circuit including electrostatic discharge circuit having protection element and trigger transistor
摘要 A semiconductor circuit includes, a first pad for a first power source, a second pad for a second power source, a third pad for an input/output signal, a protection element arranged between the third pad and the second pad; and a transistor functioning as a trigger element for use in flowing a trigger current to the protection element. The transistor includes a gate and a backgate being connected to the first pad and is connected to the protection element such that a source potential of the transistor becomes lower than a potential of the third pad, based on a voltage drop caused by the protection element, when potentials of the first pad and the third pad are kept at a power supply voltage level.
申请公布号 US8045304(B2) 申请公布日期 2011.10.25
申请号 US20080071766 申请日期 2008.02.26
申请人 RENESAS ELECTRONICS CORPORATION 发明人 MORISHITA YASUYUKI
分类号 H02H9/00 主分类号 H02H9/00
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