发明名称 |
Dual frequency low temperature oxidation of a semiconductor device |
摘要 |
Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. A two frequency plasma source is used to form a plasma in a plasma reactor. In various embodiments, different quantities of power are supplied to a power source operating at the first frequency and a power source operating at the second frequency over time.
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申请公布号 |
US8043981(B2) |
申请公布日期 |
2011.10.25 |
申请号 |
US20100762425 |
申请日期 |
2010.04.19 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
MA KAI;YOKOTA YOSHITAKA;OLSEN CHRISTOPHER S. |
分类号 |
H01L21/461;H01L21/302;H01L21/31;H01L21/469 |
主分类号 |
H01L21/461 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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