发明名称 Semiconductor memory device
摘要 A memory includes a memory cell array including destructive read-out type memory cells; a decoder selecting a cell; a sense amplifier configured to detect the data; and a read and write controller controlling a read operation and a write operation, wherein the read and write controller outputs a logical value of a write enable signal at the start of the read operation in a first period and makes the write enable signal invalid after the read operation starts during the first period, on the basis of the write enable signal and a restore signal keeping an activated state during the first period, the write enable signal being a signal allowing the write operation, the first period being a period from when the read operation starts to when a restore operation for writing the data back to the memory cell is completed.
申请公布号 US8045357(B2) 申请公布日期 2011.10.25
申请号 US20090553819 申请日期 2009.09.03
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 OGIWARA RYU;TAKASHIMA DAISABURO
分类号 G11C11/22;G11C7/00;G11C7/22;G11C7/24 主分类号 G11C11/22
代理机构 代理人
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