发明名称 |
Process for production of silicon single crystal |
摘要 |
In growing a silicon monocrystal from a silicon melt added with an N-type dopant by Czochralski method, the monocrystal is grown such that a relationship represented by a formula (1) as follows is satisfied. In the formula (1): a dopant concentration in the silicon melt is represented by C (atoms/cm3); an average temperature gradient of the grown monocrystal is represented by Gave(K/mm); a pulling-up speed is represented by V (mm/min); and a coefficient corresponding to a kind of the dopant is represented by A. By growing the silicon monocrystal under a condition shown in the left to a critical line G1, occurrence of abnormal growth due to compositional supercooling can be prevented. Gave V > A · C - 43 ( 1 )
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申请公布号 |
US8043428(B2) |
申请公布日期 |
2011.10.25 |
申请号 |
US20080524303 |
申请日期 |
2008.05.23 |
申请人 |
SUMCO TECHXIV CORPORATION |
发明人 |
KAWAZOE SHINICHI;KUBOTA TOSHIMICHI;NARUSHIMA YASUHITO;OGAWA FUKUO |
分类号 |
C30B15/04 |
主分类号 |
C30B15/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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