发明名称 Semiconductor device
摘要 A power supply capable of reducing loss of large current and high frequency. In an MCM for power supply in which a high-side power MOSFET chip, a low-side power MOSFET chip and a driver IC chip driving them are sealed in one sealing material (a capsulating insulation resin), a wiring length of a wiring DL connecting an output terminal of the driver IC chip to a gate terminal of the low-side power MOSFET chip or a source terminal is made shorter than a wiring length of a wiring DH connecting the output terminal of the driver IC chip to a gate terminal of the high-side power MOSFET chip or a source terminal. Further, the number of the wiring DL is made larger than the number of the wiring DH.
申请公布号 US8044520(B2) 申请公布日期 2011.10.25
申请号 US20070624767 申请日期 2007.01.19
申请人 RENESAS ELECTRONICS CORPORATION 发明人 AKIYAMA NOBORU;HASHIMOTO TAKAYUKI;SHIRAISHI MASAKI;KAWASHIMA TETSUYA;TATENO KOJI;MATSUURA NOBUYOSHI
分类号 H01L23/52;H01L29/40 主分类号 H01L23/52
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