| 摘要 |
<p>An atomic layer growing apparatus introduces an organic metal gas containing hydrogen to a deposition vessel to cause an organic metal component to be adsorbed on a substrate. Then, the apparatus introduces an oxidizing gas or a nitriding gas to the deposition vessel to generate plasma, thereby oxidizing or nitriding the organic metal component deposited on the substrate. When the plasma is generated, the apparatus detects emission intensity of a predetermined wavelength of light emitted on the substrate through an observation window provided in the deposition vessel. When the detected emission intensity becomes a predetermined value or less, the apparatus stops the generation of the plasma.</p> |
