| 摘要 |
<p>A SI-DOPED ALGAN/ GAN FIELD EFFECT TRANSISTOR FOR PH SENSING COMPRISING AT LEAST A LAYER OF SILICON DIOXIDE AND/OR SILICON NITRIDE FILM COVERED A TOP MOST SURFACE OF THE SI-DOPED ALGAN/ GAN FIELD EFFECT TRANSISTOR, AT LEAST A SOURCE ELECTRODE SPATIALLY ARRANGED WITH A DRAIN ELECTRODE PROVIDING A REACTION CHANNEL, A SCHOTTKY CONTACT FORMED AT THE REACTION CHANNEL OF THE SI-DOPED ALGAN/ GAN FIELD EFFECT TRANSISTOR, AT LEAST TWO LAYERS OF UNDOPED ALGAN STRUCTURE SANDWICHING A LAYER OF SI- DOPED ALGAN STRUCTURE, CHARACTERIZED IN THAT, ONE OF THE UNDOPED ALGAN STRUCTURES FORMED ON BOTTOM SURFACE OF THE SOURCE ELECTRODE AND THE DRAIN ELECTRODE, AT LEAST A LAYER OF 2DEG STRUCTURE FORMED ON BOTTOM SURFACE ON ONE OF THE UNDOPED ALGAN STRUCTURE, A BUFFER LAYER FORMED ON BOTTOM SURFACE OF THE UNDOPED GAN STRUCTURE AND AT LEAST A LAYER OF SAPPHIRE WAFER POSITIONED AS BASE STRUCTURE. 1</p> |
