Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device

摘要

METHODS OF FORMING A CONDUCTIVE TRANSPARENT OXIDE FILM LAYER FOR USE IN A CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICE Methods are generally provided for forming a conductive oxide layer (14) on a substrate (12). In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (14) (e.g., including cadmium stannate) on a substrate (12) from a target in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer (14) can be sputtered at a sputtering temperature greater of about 1000 C to about 6000 C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device (10). 32 Forming a TCO layer on a glass substrate 34 Forming a resistive transparent layer on the TCO layer 36 Forming a cadmium sulfide layer on the resistive transparent layer 38 Forming a cadmium telluride layer on the cadmium sulfide layer 40 Annealing the cadmium telluride layer in the presence of cadmium chloride 42 Washing the surface of the cadmium telluride layer to remove oxides 44 Doping the cadmium telluride layer with copper 46 Applying back contact layer(s) over the cadmium telluride layer 48 Applying an encapsulating glass over the back contact layer(s) Fig. 2