METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which simplifies a peeling process and uniformly performing a peeling and transfer on a large-sized substrate.SOLUTION: After a metal film is formed on a first substrate and an insulating film containing silicon is formed in contact with the metal film, a metal oxide film has been formed on a surface of the metal film. A semiconductor element such as a thin film transistor is formed on the insulating film. A second substrate is fixed on the semiconductor element using a first adhesive, the first substrate is separated, a third substrate such as a film substrate is fixed under the semiconductor element using a second adhesive, and the second substrate is separated. At this time, by emitting an ultraviolet ray, a reduction in adhesion of or a peeling of the first adhesive and a curing of the second adhesive are performed simultaneously.