| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device having superior reliability, and to provide a method for manufacturing the device.SOLUTION: The semiconductor light-emitting element includes a semiconductor layer 20; a light reflecting layer 31 provided on the semiconductor layer 20; and a protective layer 32 formed by electroless plating so as to cover the light reflecting layer 31. A metal layer 32A is provided between the light reflecting layer 31 and the protective layer 32. The metal layer 32A functions as a plating base layer in forming the protective layer 32. The protective layer 32 has a structure which has a more highly precise dimension and is denser than when it is formed by vapor deposition. Thus, even if the structure as a whole is microfabricated, the light reflection layer 31 can be covered, without fail, without gaps by the protective layer 32. |
