NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, AND METHOD OF FABRICATING THE SAME

摘要

PROBLEM TO BE SOLVED: To achieve an improved shape of a contact electrode and a reduced contact resistance.SOLUTION: The nonvolatile semiconductor memory includes: a memory cell having a floating gate electrode 12 formed via a first gate insulating film 11 above the semiconductor substrate 10 and a control gate electrode 14 formed via an inter-gate insulating film 13 formed on the floating gate electrode 12; and a contact electrode including a bottom electrode 32 brought into contact with the top face of the semiconductor substrate 10, a top electrode 34 formed via the inter-gate insulating film 33 formed at both ends of the bottom electrode 32, and a plug electrode 35 formed between the top electrodes 34 and brought into contact with the top face of the bottom electrode 32.