SOLID-STATE IMAGING ELEMENT, IMAGING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING ELEMENT, AND METHOD OF MANUFACTURING SOLID-STATE IMAGING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a solid-state imaging element that reduces smears caused by leakage of electric charge generated on a surface of a photoelectric conversion element to a charge transfer portion.SOLUTION: The solid-state imaging element 5 including a plurality of photoelectric conversion elements formed in a semiconductor substrate 56 and the charge transfer portion 53 for transferring electric charge generated by the respective photoelectric conversion elements is equipped with a charge discharge portion (n-type silicon substrate 56) provided below the respective photoelectric conversion element and discharging electric charges accumulated in charge storage portions 60 of the respective photoelectric conversion elements. The plurality of photoelectric conversion elements are divided into photoelectric conversion elements 51 and photoelectric conversion elements 52, and a height of a first potential barrier between a charge storage portion 60 of a photoelectric conversion element 51 and the charge discharge portion below the photoelectric conversion element 51 is lower than a height of a second potential barrier between a charge storage portion 60 of a photoelectric conversion element 52 and the charge discharge portion below the photoelectric conversion element 52.