PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

摘要

The present invention is intended to improve the uniformity in a distribution function of incident ion energy inside a wafer surface, and realize uniform plasma processing (etching or the like) inside the wafer surface. In a plasma processing apparatus, a bias application portion of a placement electrode on which a wafer is placed is divided into an inner electrode and an outer electrode at positions near the center of the wafer and the edge thereof. Each of a first bias power and a second bias power to be used to accelerate ions incident on the wafer is bifurcated, and the resultant bias powers are fed to the inner electrode and outer electrode using a power distributor by adjusting the power ratio.