| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory device that is stably operated even when the device is miniaturized.SOLUTION: The memory device includes: a memory layer 13 that is isolated for each memory cell and stores information by a variation of a resistance value; an ion source layer 14 that is formed to be isolated for each memory cell and to be laminated on the memory layer 13, and contains at least one element selected from among Cu, Ag, Zn, Al and Zr and at least one element selected from among Te, S and Se; an insulating layer 17 that isolates the memory layer 13 and the ion source layer 14 for each memory cell; and a diffusion preventing barrier 18 that is provided at a periphery of the memory layer 13 and the ion source layer 14 of each memory cell to prevent the diffusion of the element. |
