SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device includes a plurality of gate structures disposed on a substrate. Respective gate structures may include a lower control gate layer and an upper control gate layer. The upper control gate layer may be disposed on the lower control gate layer and may include a different material from the lower control gate layer. The semiconductor device may further include insulation patterned layers disposed in gap regions defined between the gate structures adjacent to each other. Upper surfaces of the insulation patterned layers may be lower than an upper surface of the lower control gate layer.