发明名称 METHODS FOR FABRICATING SEMICONDUCTOR DEVICES
摘要 Provided are semiconductor devices and methods for fabricating the same. A method for fabricating a semiconductor device includes: forming an interlayer dielectric layer including an opening in which a lower conductive layer is exposed; forming a barrier layer on the interlayer dielectric layer and on the lower conductive layer the opening; forming an anti-seed generation region on a surface of the barrier layer which is provided on a top surface of the interlayer dielectric layer and an upper sidewall of the opening; and filling the opening with conductive material to form a conductive layer.
申请公布号 US2011256717(A1) 申请公布日期 2011.10.20
申请号 US201113077463 申请日期 2011.03.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI JINWOO;JEONG GEUN HEE;KIM TAE-YEOL
分类号 H01L21/768 主分类号 H01L21/768
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