发明名称 |
METHODS FOR FABRICATING SEMICONDUCTOR DEVICES |
摘要 |
Provided are semiconductor devices and methods for fabricating the same. A method for fabricating a semiconductor device includes: forming an interlayer dielectric layer including an opening in which a lower conductive layer is exposed; forming a barrier layer on the interlayer dielectric layer and on the lower conductive layer the opening; forming an anti-seed generation region on a surface of the barrier layer which is provided on a top surface of the interlayer dielectric layer and an upper sidewall of the opening; and filling the opening with conductive material to form a conductive layer.
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申请公布号 |
US2011256717(A1) |
申请公布日期 |
2011.10.20 |
申请号 |
US201113077463 |
申请日期 |
2011.03.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI JINWOO;JEONG GEUN HEE;KIM TAE-YEOL |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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