发明名称 METHOD OF MANUFACTURING WAFER-BONDED SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a wafer-bonded semiconductor device reducing a warpage in case of a wafer junction by a simple process at low cost.SOLUTION: The manufacturing method of the wafer-bonded semiconductor device bonding a first wafer board 1 and a second wafer board 2 includes: a first step of previously forming bonding members 3 and 5 having a bonding function in case of a heating on the wafer bonding surface sides of the first wafer board 1 and the second wafer board 2; and a second step of supplying the surfaces of the bonding members formed by the first step with flux paste 4 containing at least two pulverulent-powder materials having a reactivity. The manufacturing method of the wafer-bonded semiconductor device further includes a third step of conducting an excitation for starting the reaction of the flux paste 4 supplied by the second step.
申请公布号 JP2011210758(A) 申请公布日期 2011.10.20
申请号 JP20100074081 申请日期 2010.03.29
申请人 HITACHI LTD 发明人 TAKAI TOSHIAKI;SAKIKAWA YUKIO
分类号 H01L23/12;H01L23/02 主分类号 H01L23/12
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