| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive bulk type manganese silicide single crystal or polycrystal doped with Ga or Sn that is effectively used as a thermoelectric conversion material, an optical sensor, an optical element, etc., expected to have a high performance index at an intermediate temperature of approximately 300 to 600°C, and to provide a method of manufacturing the same in which the manufacture is easily and safely achieved in a short time.SOLUTION: The problem is solved with the bulk type manganese silicide single crystal or polycrystal doped with Ga or Sn characterized in being expressed by formula (1) or formula (2). Formula (1): Mn11Si19-xGax [where x is larger than 0 and equal to or less than 0.1]; and formula (2): Mn4 Si7-y Sny [where y is larger than 0 and equal to or less than 0.1]. |
