发明名称 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
A semiconductor device includes a gate insulation film formed over a semiconductor substrate; a cap film formed over the gate insulation film; a silicon oxide film formed over the cap film; a metal gate electrode formed over the silicon oxide film; and source/drain diffused layers formed in the semiconductor substrate on both sides of the metal gate electrode.
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申请公布号 |
US2011254106(A1) |
申请公布日期 |
2011.10.20 |
申请号 |
US201113052776 |
申请日期 |
2011.03.21 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
KATAKAMI AKIRA;AOYAMA TAKAYUKI |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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