SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having achieved a miniaturization while reducing a failure, or provide a semiconductor device having achieved the miniaturization while retaining excellent characteristics.SOLUTION: The semiconductor device includes: an insulating layer; a source electrode and a drain electrode embedded in the insulating layer; an oxide semiconductor layer in contact with a part of the insulating layer surface, the source electrode surface, and the drain electrode surface; a gate insulating layer covering the oxide semiconductor layer; and a gate electrode on the gate insulating layer, wherein a region which is a part of the insulating layer surface and in contact with the oxide semiconductor layer has a root mean square (RMS) roughness of 1 nm or less, and a height difference between a part of the insulating layer surface and the source electrode surface and a height difference between a part of the insulating layer surface and the drain electrode surface are 5 nm or more.