发明名称 |
SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND ELECTROMAGNETIC WAVE GENERATING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate that outputs a plurality of different frequencies.SOLUTION: The semiconductor substrate comprises a first impurity semiconductor including a p-type semiconductor or n-type semiconductor, and a depleted semiconductor having a plurality of depleted regions in contact with the first impurity semiconductor, wherein the plurality of depleted regions each have a first interface with the first impurity semiconductor and a surface opposed to the first interface, and the plurality of depleted regions differ in at least one of an average distance between a first interface and a surface in a direction perpendicular to the first interface and a composition. |
申请公布号 |
JP2011211191(A) |
申请公布日期 |
2011.10.20 |
申请号 |
JP20110053420 |
申请日期 |
2011.03.10 |
申请人 |
SUMITOMO CHEMICAL CO LTD |
发明人 |
YAMADA HISASHI;HATA MASAHIKO;TAKADA TOMOYUKI;NAKAYAMA MASAAKI |
分类号 |
H01L21/205;H01L21/20;H01S1/02 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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