发明名称 SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND ELECTROMAGNETIC WAVE GENERATING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor substrate that outputs a plurality of different frequencies.SOLUTION: The semiconductor substrate comprises a first impurity semiconductor including a p-type semiconductor or n-type semiconductor, and a depleted semiconductor having a plurality of depleted regions in contact with the first impurity semiconductor, wherein the plurality of depleted regions each have a first interface with the first impurity semiconductor and a surface opposed to the first interface, and the plurality of depleted regions differ in at least one of an average distance between a first interface and a surface in a direction perpendicular to the first interface and a composition.
申请公布号 JP2011211191(A) 申请公布日期 2011.10.20
申请号 JP20110053420 申请日期 2011.03.10
申请人 SUMITOMO CHEMICAL CO LTD 发明人 YAMADA HISASHI;HATA MASAHIKO;TAKADA TOMOYUKI;NAKAYAMA MASAAKI
分类号 H01L21/205;H01L21/20;H01S1/02 主分类号 H01L21/205
代理机构 代理人
主权项
地址