| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure that never makes a step-cut of a barrier metal layer on a ridge-portion contact layer to prevent Au of an Au layer on the barrier metal layer from being diffused into a ridge from the step-cut portion.SOLUTION: An n-type buffer layer, an n-type first clad layer, an active layer, a p-type first second clad layer, a p-type etch stop layer, a p-type second second clad layer, and a p-type contact layer are laminated on an n-type semiconductor substrate. Two isolation grooves are formed in parallel from an upper surface of the contact layer to a bottom of the second second clad layer, and the ridge is formed between both the isolation grooves. The ridge has a lower portion formed of the second second clad layer and the ridge-portion contact layer formed of the contact layer. Both-side upper surfaces of the ridge-portion contact layer which face the isolation grooves are sloped, and barrier metal layers are formed thereupon. A portion extending from a lower portion of a side face of the ridge to a portion beyond the isolation grooves is covered with an insulating film. |
