| 摘要 |
In the rapid heat treatment apparatus according to the present invention, the pyrometer comprises a light receiving rod that is used to receive radiated light emitted from a wafer; a light source that is installed to radiate light onto a wafer through the light receiving load; and a light sensing part that receives radiated light reflected after being radiated from the light source to the wafer and light emitted from the wafer to measure the temperature of the wafer, wherein a transparent protective cap is installed on the light receiving load so that the light receiving load is not contaminated by by-products formed after the wafer is heated. According to the present invention, contamination is prevented by the transparent protective cap so that any difficulty experienced from replacing an expensive light receiving rod is eliminated, and the need for initial setting of the pyrometer is also eliminated, so that process downtime is reduced and process efficiency is enhanced.
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