发明名称 MULTIPLE PROGRAMMING OF FLASH MEMORY WITHOUT ERASE
摘要 To store, successively, in a plurality of memory cells, first and second pluralities of input bits that are equal in number, a first transformation transforms the first input bits into a first plurality of transformed bits. A first portion of the cells is programmed to store the first transformed bits according to a mapping of bit sequences to cell levels, but, if the first transformation has a variable output length, only if there are few enough first transformed bits to fit in the first cell portion. Then, without erasing a second cell portion that includes the first portion, if respective levels of the cells of the second portion, that represent a second plurality of transformed bits obtained by a second transformation of the second input bits, according to the mapping, are accessible from the current cell levels, the second portion is so programmed to store the second transformed bits.
申请公布号 US2011258370(A1) 申请公布日期 2011.10.20
申请号 US201113086408 申请日期 2011.04.14
申请人 RAMOT AT TEL AVIV UNIVERSITY LTD. 发明人 SHARON ERAN;ALROD IDAN;LITSYN SIMON;ILANI ISHAI
分类号 G06F12/02 主分类号 G06F12/02
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