发明名称 METHOD FOR REGENERATING WAFER WITH MULTILAYER FILM/PATTERN
摘要 PROBLEM TO BE SOLVED: To solve the problems: chemical etching requires replacement of an etching liquid into an etching liquid suitable for each of coatings in a multilayer film, resulting in much time and effort, a sandblasting method enables removal of a hard coating, but hardly removes a soft coating or an organic coating, and causes damages to silicon, and laser machining causes serious damages to silicon.SOLUTION: A method for regenerating a silicon wafer includes: a step for chucking a regeneratable wafer W with a multilayer film/pattern to a vacuum chuck 1; a step for rotating the vacuum chuck 1; a step for forwarding or retracing a plane pedestal 6; a step for cutting the multilayer film/pattern of the wafer W with an ultra-hard or diamond cutting edge 3a on the tip of a cutting tool 3; and a step for cutting the wafer W at a constant rotational speed from the outer circumference to the center by controlling a cutting speed between the ultra-hard or diamond cutting edge 3a and the wafer W.
申请公布号 JP2011211012(A) 申请公布日期 2011.10.20
申请号 JP20100078184 申请日期 2010.03.30
申请人 LAPMASTER SFT CORP;FUJIMI FINE TECHNOLOGY INC 发明人 SUZUKI MIKIO;WATANABE SHOGO;SUZUKI JUNJI
分类号 H01L21/304 主分类号 H01L21/304
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