PRODUCTION OF A CRYSTALLINE SEMICONDUCTOR MATERIAL

摘要

The invention relates to a method for producing a crystalline semiconductor material, wherein particles from the semiconductor material and/or a precursor compound of the semiconductor material are fed into a gas stream which has a sufficiently high temperature, in order to convert the particles of the semiconductor material from the solid into the liquid and/or gaseous state and/or in order to thermally decompose the precursor compound. In a further step, liquid semiconductor material is condensed and/or separated out of the gas stream and converted into a solid state to form monocrystalline or polycrystalline crystal structures.