发明名称 |
IMPROVED MULTICHAMBER SPLIT PROCESSES FOR LED MANUFACTURING |
摘要 |
Embodiments described herein generally relate to methods for forming Group III-V materials by metal-organic chemical vapor deposition (MOCVD) processes and/or hydride vapor phase epitaxial (HVPE) processes. In one embodiment, deposition of a group III1-N layer on a substrate is performed in a first chamber, deposition of a group III2-N layer on the substrate is performed in a second chamber, and deposition of a group III3-N layer on the substrate is performed in a chamber different from the chamber where the group III2-N layer is deposited. Between the group III2-N layer deposition and the group III3-N layer deposition, one or more surface treatment processes are performed on the substrate to reduce non-radiative recombination at the interface and improve overall electroluminescence of the produced structure. |
申请公布号 |
WO2011044046(A3) |
申请公布日期 |
2011.10.20 |
申请号 |
WO2010US51333 |
申请日期 |
2010.10.04 |
申请人 |
APPLIED MATERIALS, INC.;SU, JIE |
发明人 |
SU, JIE |
分类号 |
H01L33/32;H01L33/02;H01L21/205;H01L33/30 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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