| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment method capable of improving quality characteristics of a substrate, a substrate obtained by the method, a method of manufacturing a substrate by using the substrate treatment method, and a method of manufacturing a solar cell using the substrate treatment method.SOLUTION: In the substrate treatment method, a low-temperature gettering process wherein, after forming an impurity removing layer containing an impurity capturing component for capturing impurities on a front and/or rear face of a substrate including the impurities, the substrate is heat-treated at a substrate temperature ranging from 650°C or above through less than 800°C, and/or a high-temperature gettering process wherein the substrate is treated at a temperature ranging from 800°C to 900°C are/is performed to capture the impurities into the impurity removing layer. By using this substrate treatment method, quality characteristics of the substrate can be improved. Moreover, by treating a silicon substrate contaminated by impurities, especially, a low-grade silicon substrate, using the substrate treatment method, the silicon substrate can be applied as a silicon substrate, etc. for a solar cell. This invention has an effect of contributing to the spread of low-cost solar cells by remarkably reducing a manufacturing cost of solar cells while at the same time keeping a high photoelectric conversion efficiency. |
