| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method that reducing steps requiring precise control by forming a bipolar transistor and a vertical device such as a vertical FET into a bottom-up configuration by selective growth using an insulation film mask.SOLUTION: On a first principal face of a conductive substrate 20, a first insulation film 32, a metal film 42, and a second insulation film 52 are formed sequentially. Next, by removing a central region of the first insulation film, metal film, and second insulation film, an opening 70 for growth to expose the conductive substrate is formed. Then, semiconductor growing portions 82, 84 are formed inside the opening for growth. Thereafter, a portion 72 of an extraction electrode defining region formed in a peripheral region around the central region of the second insulation film is removed to form an opening for an extraction electrode to expose the metal film. Then, an extraction electrode 90 is formed inside the opening 72 for an extraction electrode. Then, an ohmic electrode 92 is formed on the semiconductor growing portions and on a second principal face of the conductive substrate. |
