发明名称 |
MULTI-PORT MEMORY HAVING A VARIABLE NUMBER OF USED WRITE PORTS |
摘要 |
A multi-port memory is operated according to a method. Data is written, in a first mode, to a storage node of a memory cell from a first port through a first conductance. The first mode is characterized by a power supply voltage being applied at a power node at a first level. Data is written, in a second mode, to the storage node of the memory cell simultaneously from the first port through the first conductance and a second port through a second conductance. The second mode is characterized by the power supply voltage being applied at the power node at a second level different from the first level.
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申请公布号 |
US2011255361(A1) |
申请公布日期 |
2011.10.20 |
申请号 |
US20100760039 |
申请日期 |
2010.04.14 |
申请人 |
RUSSELL ANDREW C;ZHANG SHAYAN |
发明人 |
RUSSELL ANDREW C.;ZHANG SHAYAN |
分类号 |
G11C8/16;G11C5/14;G11C7/22 |
主分类号 |
G11C8/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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