发明名称 PLASMA ACTIVATED CONFORMAL FILM DEPOSITION
摘要 Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.
申请公布号 WO2011130326(A2) 申请公布日期 2011.10.20
申请号 WO2011US32186 申请日期 2011.04.12
申请人 NOVELLUS SYSTEMS, INC.;LAVOIE, ADRIEN;SWAMINATHAN, SHANKAR;KANG, HU;CHANDRASEKHARAN, RAMESH;DORSH, TOM;HAUSMANN, DENNIS, M.;HENRI, JON;JEWELL, THOMAS;LI, MING;SCHLIEF, BRYAN;XAVIER, ANTONIO;MOUNTSIER, THOMAS, W.;VAN SCHRAVENDIJK, BART, J.;SRINIVASAN, EASWAR;SRIRAM, MANDYAM 发明人 LAVOIE, ADRIEN;SWAMINATHAN, SHANKAR;KANG, HU;CHANDRASEKHARAN, RAMESH;DORSH, TOM;HAUSMANN, DENNIS, M.;HENRI, JON;JEWELL, THOMAS;LI, MING;SCHLIEF, BRYAN;XAVIER, ANTONIO;MOUNTSIER, THOMAS, W.;VAN SCHRAVENDIJK, BART, J.;SRINIVASAN, EASWAR;SRIRAM, MANDYAM
分类号 C23C16/44;C23C16/455;C23C16/50;H01L21/205;H01L21/3065 主分类号 C23C16/44
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